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JANTXV2N6758

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

JANTXV2N6758

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

2N6758

N-ChannelPowerMOSFETs,9A,150V/200V

Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N6758

VGSRatedat?20V

DESCRIPTION ?VGSRatedat±20V ?SiliconGateforfastswitchingspeeds ?IDSS、RDS(ON),specifiedatelevatedtemperature ?Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N6758

N-CHANNELMOSFET

N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX2N6758

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

JANTX2N6758

RepetitiveAvalancheRatings

IRF

International Rectifier

JANTX2N6758

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.40ohm,Id=9A)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    JANTXV2N6758

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3

  • 功能描述：

    TRANS MOSFET N-CH 200V 9A 2PIN TO-3 - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NO
24+
NO
1
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
MICROSEMI
638
原裝正品
 詢價(jià)
Microsemi Corporation
22+
TO204AA TO3
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Microsemi Corporation
21+
TO204AA TO3
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
Microsemi Corporation
23+
TO204AA TO3
9000
原裝正品，支持實(shí)單
 詢價(jià)
Microsemi Corporation
2022+
TO-204AA,TO-3
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
IR
23+
TO-3
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-3
7000
詢價(jià)
INFINEON
23+
M-TO204-3
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價(jià)
更多JANTXV2N6758供應(yīng)商 更新時(shí)間2025-1-29 13:30:00

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