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IXTK120N25P

PolarHT Power MOSFET

N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFH120N25T

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

IXYS

IXYS Corporation

IXFK120N25

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCcon

IXYS

IXYS Corporation

IXFK120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK120N25P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK120N25P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features ?InternationalStandardPackages ?FastIntrinsicDiode ?AvalancheRated ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?Switched-ModeandResonant-ModePowe

IXYS

IXYS Corporation

IXFQ120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT120N25T

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

IXYS

IXYS Corporation

IXFX120N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX120N25

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCcon

IXYS

IXYS Corporation

IXFX120N25P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features ?InternationalStandardPackages ?FastIntrinsicDiode ?AvalancheRated ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?Switched-ModeandResonant-ModePowe

IXYS

IXYS Corporation

IXTK120N25

HighCurrentMegaMOSFET

IXYS

IXYS Corporation

IXTK120N25

HighCurrentMegaMOSFET

HighCurrentMegaMOS?FET N-ChannelEnhancementMode Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Advantages ?Easyto

IXYS

IXYS Corporation

IXTN120N25

HighCurrentMegaMOSFET

IXYS

IXYS Corporation

RCJ120N25

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

RCJ120N25

Nch250V12APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RCX120N25

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

RCX120N25

10VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RDN120N25

Switching(250V,12A)

Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)Exellentresistancetodamagefromstaticelectricity. Application Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團

UPD120N25TA

THREE-TERMINALLOW-DROPOUTPOSITIVE-VOLTAGEREGULATOR(OUTPUTCURRENT:0.3A)

Features ?Outputcurrent:0.3A ?On-chipovercurrentprotectioncircuit ?On-chipthermalprotectioncircuit ?Smallcircuitoperationcurrent:60μATYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    IXTK120N25P

  • 功能描述：

    MOSFET 120 Amps 250V 0.024 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264(IXTK)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
Littelfuse/IXYS
23+
TO-264
7810
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IXYS
1215+
TO-264
150000
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
 詢價
IXYS
24+
TO-264
8866
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
18+
TO264
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-3PL
560
詢價
IXYS
1931+
N/A
47
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多IXTK120N25P供應(yīng)商 更新時間2025-1-13 19:25:00

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