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IXFM26N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM26N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andlaserdrives.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR26N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=200mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR26N50

HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface)

(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR26N50Q

HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface)

(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFT26N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT26N50Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFH26N50SN

  • 制造商：

    IXYS Corporation

  • 功能描述：

    Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247AD

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS/艾賽斯
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS/艾賽斯
2022
TO247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IXYS/艾賽斯
24+
TO247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
IXYS
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS
1503+
TO-247
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-247
5425
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2473
13880
公司只售原裝,支持實單
 詢價
更多IXFH26N50SN供應(yīng)商 更新時間2025-1-28 11:00:00

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