首頁 >IXFH15N100Q>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IXFH15N100Q | HiPerFET Power MOSFETs Q-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea | IXYS IXYS Corporation | IXYS | |
IXFH15N100Q | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
HiperFETTM Power MOSFETs Q3-Class N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?LowIntrinsicGateResistance ?InternationalStandardPackages ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applic | IXYS IXYS Corporation | IXYS | ||
isc N-Channel MOSFET Transistor ·FEATURES ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea | IXYS IXYS Corporation | IXYS | ||
PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo | IXYS IXYS Corporation | IXYS | ||
PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
IGBTLightspeedSeries Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Lowswitchinglosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeandresonant-mod | IXYS IXYS Corporation | IXYS | ||
IGBTLightspeedSeries Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Lowswitchinglosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeandresonant-mod | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號(hào)：
IXFH15N100Q
- 功能描述：
MOSFET 15 Amps 1000V 0.725 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IXYS/艾賽斯 |
23+ |
TO-247 |
59580 |
原裝正品 華強(qiáng)現(xiàn)貨 |
詢價(jià) | ||
IXYS |
2016+ |
TO-247 |
2000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
IXYS |
2020+ |
TO-247 |
18600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
IXYS |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IXYS |
2018+ |
TO-247 |
6528 |
承若只做進(jìn)口原裝正品假一賠十! |
詢價(jià) | ||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IXYS |
22+23+ |
TO-247 |
53199 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IXYS/艾賽斯 |
22+ |
TO-247 |
16159 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
IXYS |
19+ |
TO-247 |
8650 |
原裝正品,現(xiàn)貨熱賣 |
詢價(jià) | ||
IXYS |
2016+ |
TO-247 |
28 |
剛到現(xiàn)貨加微13425146986 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IXFH15N100Q3
- IXFH160N15T2
- IXFH16N50P
- IXFH170N10P
- IXFH18N60P
- IXFH20N100P
- IXFH20N60
- IXFH20N80Q
- IXFH22N50P
- IXFH22N60P3
- IXFH24N50
- IXFH24N80P
- IXFH26N50
- IXFH26N50P3
- IXFH26N60P
- IXFH28N60P3
- IXFH30N50Q3
- IXFH320N10T2
- IXFH340N075T2
- IXFH36N50P
- IXFH400N075T2
- IXFH40N30Q
- IXFH42N20
- IXFH42N60P3
- IXFH44N50Q3
- IXFH50N20
- IXFH50N50P3
- IXFH52N30P
- IXFH52N50P2
- IXFH58N20Q
- IXFH6N100
- IXFH6N120P
- IXFH70N30Q3
- IXFH75N10
- IXFH76N07-12
- IXFH80N10Q
- IXFH86N30T
- IXFH94N30P3
- IXFH96N20P
- IXFH9N80Q
- IXFK110N07
- IXFK120N20P
- IXFK120N25P
- IXFK140N20P
- IXFK140N30P
相關(guān)庫存
更多- IXFH15N80Q
- IXFH16N120P
- IXFH16N80P
- IXFH18N100Q3
- IXFH18N90P
- IXFH20N50P3
- IXFH20N80P
- IXFH21N50
- IXFH22N60P
- IXFH230N075T2
- IXFH24N50Q
- IXFH24N90P
- IXFH26N50P
- IXFH26N50Q
- IXFH26N60Q
- IXFH30N50P
- IXFH30N60P
- IXFH32N50
- IXFH35N30
- IXFH36N60P
- IXFH40N30
- IXFH40N50Q
- IXFH42N50P2
- IXFH44N50P
- IXFH4N100Q
- IXFH50N30Q3
- IXFH50N60P3
- IXFH52N30Q
- IXFH58N20
- IXFH60N50P3
- IXFH6N100Q
- IXFH70N20Q3
- IXFH74N20P
- IXFH76N07-11
- IXFH7N80
- IXFH80N20Q
- IXFH8N80
- IXFH96N15P
- IXFH9N80
- IXFK102N30P
- IXFK120N20
- IXFK120N25
- IXFK120N30T
- IXFK140N25T
- IXFK150N30P3
