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IS61LF12836A-7.5B2I集成電路（IC）的存儲器規(guī)格書PDF中文資料
| 廠商型號 |
IS61LF12836A-7.5B2I |
| 參數(shù)屬性 | IS61LF12836A-7.5B2I 封裝/外殼為119-BBGA；包裝為托盤；類別為集成電路（IC）的存儲器；產(chǎn)品描述：IC SRAM 4.5MBIT PARALLEL 119PBGA |
| 功能描述 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 封裝外殼 | 119-BBGA |
| 文件大小 |
166.7 Kbytes |
| 頁面數(shù)量 |
25 頁 |
| 生產(chǎn)廠商 | Integrated Silicon Solution Inc |
| 企業(yè)簡稱 |
ISSI【北京矽成】 |
| 中文名稱 | 北京矽成半導體有限公司官網(wǎng) |
| 原廠標識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-1-10 17:40:00 |
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IS61LF12836A-7.5B2I規(guī)格書詳情
DESCRIPTION
The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 words by 32 bits. The IS61(64)LF/VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by 18 bits. Fabricated with ISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.
FEATURES
? Internal self-timed write cycle
? Individual Byte Write Control and Global Write
? Clock controlled, registered address, data and control
? Burst sequence control using MODE input
? Three chip enable option for simple depth expansion and address pipelining
? Common data inputs and data outputs
? Auto Power-down during deselect
? Single cycle deselect
? Snooze MODE for reduced-power standby
? Power Supply
LF: VDD 3.3V + 5, VDDQ 3.3V/2.5V + 5
VF: VDD 2.5V -5 +10, VDDQ 2.5V -5 +10
? JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages
? Automotive temperature available
? Lead-free available
產(chǎn)品屬性
- 產(chǎn)品編號：
IS61LF12836A-7.5B2I
- 制造商：
ISSI, Integrated Silicon Solution Inc
- 類別：
集成電路（IC） > 存儲器
- 包裝：
托盤
- 存儲器類型：
易失
- 存儲器格式：
SRAM
- 技術：
SRAM - 同步，SDR
- 存儲容量：
4.5Mb（128K x 36）
- 存儲器接口：
并聯(lián)
- 電壓 - 供電：
3.135V ~ 3.6V
- 工作溫度：
-40°C ~ 85°C（TA）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
119-BBGA
- 供應商器件封裝：
119-PBGA（14x22）
- 描述：
IC SRAM 4.5MBIT PARALLEL 119PBGA
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
BGA |
16000 |
原裝優(yōu)勢絕對有貨 |
詢價 | ||
ISSI |
23+ |
119-BGA(14x22) |
9000 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
ISSI |
22+ |
8000 |
原廠原裝,價格優(yōu)勢!13246658303 |
詢價 | |||
ISSI |
23+ |
100-TQFP |
9231 |
詢價 | |||
ISSI, Integrated Silicon Solut |
21+ |
90-VFBGA |
5280 |
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
ISSI Integrated Silicon Soluti |
22+ |
119PBGA (14x22) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
ISSI, Integrated Silicon Solu |
23+ |
119-PBGA14x22 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ISSI |
23+ |
NA |
5000 |
專業(yè)電子元器件供應鏈正邁科技特價代理QQ1304306553 |
詢價 | ||
ISSI |
2016+ |
TQFP100 |
5562 |
只做進口原裝現(xiàn)貨!或訂貨!假一賠十! |
詢價 | ||
ISSI Integrated Silicon Soluti |
21+ |
119PBGA (14x22) |
13880 |
公司只售原裝,支持實單 |
詢價 |
