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IS61LF12836A-6.5TQ集成電路（IC）的存儲器規(guī)格書PDF中文資料
| 廠商型號 |
IS61LF12836A-6.5TQ |
| 參數(shù)屬性 | IS61LF12836A-6.5TQ 封裝/外殼為100-LQFP；包裝為卷帶（TR）；類別為集成電路（IC）的存儲器；產(chǎn)品描述：IC SRAM 4.5MBIT PARALLEL 100TQFP |
| 功能描述 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 封裝外殼 | 100-LQFP |
| 文件大小 |
166.7 Kbytes |
| 頁面數(shù)量 |
25 頁 |
| 生產(chǎn)廠商 | Integrated Silicon Solution Inc |
| 企業(yè)簡稱 |
ISSI【北京矽成】 |
| 中文名稱 | 北京矽成半導(dǎo)體有限公司官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-1-10 19:09:00 |
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IS61LF12836A-6.5TQ規(guī)格書詳情
DESCRIPTION
The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 words by 32 bits. The IS61(64)LF/VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by 18 bits. Fabricated with ISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.
FEATURES
? Internal self-timed write cycle
? Individual Byte Write Control and Global Write
? Clock controlled, registered address, data and control
? Burst sequence control using MODE input
? Three chip enable option for simple depth expansion and address pipelining
? Common data inputs and data outputs
? Auto Power-down during deselect
? Single cycle deselect
? Snooze MODE for reduced-power standby
? Power Supply
LF: VDD 3.3V + 5, VDDQ 3.3V/2.5V + 5
VF: VDD 2.5V -5 +10, VDDQ 2.5V -5 +10
? JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages
? Automotive temperature available
? Lead-free available
產(chǎn)品屬性
- 產(chǎn)品編號：
IS61LF12836A-6.5TQLI-TR
- 制造商：
ISSI, Integrated Silicon Solution Inc
- 類別：
集成電路（IC） > 存儲器
- 包裝：
卷帶（TR）
- 存儲器類型：
易失
- 存儲器格式：
SRAM
- 技術(shù)：
SRAM - 同步，SDR
- 存儲容量：
4.5Mb（128K x 36）
- 存儲器接口：
并聯(lián)
- 電壓 - 供電：
3.135V ~ 3.6V
- 工作溫度：
-40°C ~ 85°C（TA）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
100-LQFP
- 供應(yīng)商器件封裝：
100-LQFP（14x20）
- 描述：
IC SRAM 4.5MBIT PARALLEL 100TQFP
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
ROHS |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ISSI(美國芯成) |
23+ |
LQFP100(14x20) |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價 | ||
ISSI Integrated Silicon Soluti |
23+/24+ |
100-LQFP |
8600 |
只供原裝進口公司現(xiàn)貨+可訂貨 |
詢價 | ||
ISSI |
24+ |
TQFP-100 |
16000 |
原裝優(yōu)勢絕對有貨 |
詢價 | ||
ISSI |
23+ |
100-TQFP(14x20) |
1389 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
ISSI(美國芯成) |
23+ |
LQFP100(14x20) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
ISSI |
23+ |
BGAQFP |
8659 |
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢. |
詢價 | ||
ISSI, Integrated Silicon Solut |
21+ |
90-VFBGA |
5280 |
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
ISSI |
24+ |
TQFP |
35200 |
一級代理/放心采購 |
詢價 | ||
ISSI Integrated Silicon Soluti |
22+ |
100TQFP (14x20) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
