IS61LF12836A-6.5B2中文資料北京矽成數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 words by 32 bits. The IS61(64)LF/VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by 18 bits. Fabricated with ISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES

? Internal self-timed write cycle

? Individual Byte Write Control and Global Write

? Clock controlled, registered address, data and control

? Burst sequence control using MODE input

? Three chip enable option for simple depth expansion and address pipelining

? Common data inputs and data outputs

? Auto Power-down during deselect

? Single cycle deselect

? Snooze MODE for reduced-power standby

? Power Supply

LF: VDD 3.3V + 5, VDDQ 3.3V/2.5V + 5

VF: VDD 2.5V -5 +10, VDDQ 2.5V -5 +10

? JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages

? Automotive temperature available

? Lead-free available