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IRG4BC10SDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

StandardSpeedCoPackIGBT Features ?Extremelylowvoltagedrop1.1Vtyp.@2A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-so

IRF

International Rectifier

IRG4BC10SDPBF

包裝:管件 封裝/外殼:TO-220-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 14A 38W TO220AB

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC10K

ShortCircuitRatedUltraFastIGBT

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Bene

IRF

International Rectifier

IRG4BC10KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.2.39V,@Vge=15V,Ic=5.0A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4BC10KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4BC10KDPBF

Highshortcircuitratingoptimizedformotorcontrol

IRF

International Rectifier

IRG4BC10KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedw

IRF

International Rectifier

IRG4BC10KPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedw

IRF

International Rectifier

IRG4BC10S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.1.10V,@Vge=15V,Ic=2.0A)

Features ?Extremelylowvoltagedrop;1.1Vtypicalat2A ?S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives,upto2KHzinChopperApplications ?VeryTightVce(on)distribution ?IndustrystandardTO-220ABpackage Benef

IRF

International Rectifier

IRG4BC10SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandardSpeedCoPackIGBT Features ?Extremelylowvoltagedrop1.1Vtyp.@2A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-so

IRF

International Rectifier

IRG4BC10SD-L

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC10SD-L

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A)

IRF

International Rectifier

IRG4BC10SD-LPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC10SD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC10SD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A)

IRF

International Rectifier

IRG4BC10SD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC10SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Extremelylowvoltagedrop;1.1Vtypicalat2A ?S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives,upto2KHzinChopperApplications ?VeryTightVce(on)distribution ?IndustrystandardTO-220ABpackage ?

IRF

International Rectifier

IRG4BC10UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A)

UltraFastCoPackIGBT Features ?UltraFast:Optimizedforhighoperating upto80kHzinhardswitching,>200kHzin resonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousGeneration ?IGBTco-packagedwith

IRF

International Rectifier

IRG4BC10UDPBF

INDUSTRYSTANDARDTO-220ABPACKAGE

IRF

International Rectifier

IRG4BC10UDPBF

INSULATEDGATEBIPOLARTRANSISROTWITHULTRAFASTSOFRRECOVERYDIODEUltraFastCoPackIGBT

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IRG4BC10SDPBF

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    1.8V @ 15V,8A

  • 開關(guān)能量:

    310μJ(開),3.28mJ(關(guān))

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關(guān))值:

    76ns/815ns

  • 測試條件:

    480V,8A,100 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應商器件封裝:

    TO-220AB

  • 描述:

    IGBT 600V 14A 38W TO220AB

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-220-3
86
詢價
IR/進口原
17+
TO-220
6200
詢價
IR
2016+
TO-220
6528
房間原裝進口現(xiàn)貨假一賠十
詢價
IR
23+
TO-220AB
7750
全新原裝優(yōu)勢
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
IR
2020+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價
INFINEON
1503+
TO-220
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
22+
TO-220
32350
原裝正品 假一罰十 公司現(xiàn)貨
詢價
更多IRG4BC10SDPBF供應商 更新時間2024-11-16 16:30:00