首頁 >IRG4BC10SDPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4BC10SDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE StandardSpeedCoPackIGBT Features ?Extremelylowvoltagedrop1.1Vtyp.@2A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-so | IRF International Rectifier | IRF | |
IRG4BC10SDPBF | 包裝:管件 封裝/外殼:TO-220-3 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 14A 38W TO220AB | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
ShortCircuitRatedUltraFastIGBT ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Bene | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.2.39V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRF International Rectifier | IRF | ||
Highshortcircuitratingoptimizedformotorcontrol | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedw | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedw | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.1.10V,@Vge=15V,Ic=2.0A) Features ?Extremelylowvoltagedrop;1.1Vtypicalat2A ?S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives,upto2KHzinChopperApplications ?VeryTightVce(on)distribution ?IndustrystandardTO-220ABpackage Benef | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE StandardSpeedCoPackIGBT Features ?Extremelylowvoltagedrop1.1Vtyp.@2A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-so | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A) | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A) | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?Extremelylowvoltagedrop;1.1Vtypicalat2A ?S-Speed:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives,upto2KHzinChopperApplications ?VeryTightVce(on)distribution ?IndustrystandardTO-220ABpackage ? | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A) UltraFastCoPackIGBT Features ?UltraFast:Optimizedforhighoperating upto80kHzinhardswitching,>200kHzin resonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousGeneration ?IGBTco-packagedwith | IRF International Rectifier | IRF | ||
INDUSTRYSTANDARDTO-220ABPACKAGE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISROTWITHULTRAFASTSOFRRECOVERYDIODEUltraFastCoPackIGBT | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號:
IRG4BC10SDPBF
- 制造商:
Infineon Technologies
- 類別:
分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
1.8V @ 15V,8A
- 開關(guān)能量:
310μJ(開),3.28mJ(關(guān))
- 輸入類型:
標準
- 25°C 時 Td(開/關(guān))值:
76ns/815ns
- 測試條件:
480V,8A,100 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應商器件封裝:
TO-220AB
- 描述:
IGBT 600V 14A 38W TO220AB
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
86 |
詢價 | |||
IR/進口原 |
17+ |
TO-220 |
6200 |
詢價 | |||
IR |
2016+ |
TO-220 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
IR |
23+ |
TO-220AB |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
20+ |
TO-220 |
38560 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
INFINEON |
1503+ |
TO-220 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR |
22+ |
TO-220 |
32350 |
原裝正品 假一罰十 公司現(xiàn)貨 |
詢價 |
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