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IRFS620

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS620B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS620A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFW620B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL620

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=5.2A)

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL620

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 N

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.8? ID=5A FEATURES ?Logic-LevelGateDrive ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.609?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL620A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL620PBF

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620PBF

HEXFETPOWERMOSFET

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL620PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620S

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=5.2A)

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheSMD-220isasurface-mountpowerpackagecapableofa

IRF

International Rectifier

IRL620S

SurfaceMount

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620SPBF

HEXFETPowerMOSFET

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheSMD-220isasurface-mountpowerpackagecapableofa

IRF

International Rectifier

IRL620SPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620STRLPBFA

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFS620

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | SOT-186

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO 220F
155597
明嘉萊只做原裝正品現(xiàn)貨
 詢價
仙童
06+
TO-220
6000
原裝
 詢價
IR
23+
原廠原裝
5000
全新原裝
 詢價
FAIRCHILD/仙童
22+
TO-220F
6000
十年配單,只做原裝
 詢價
F
23+
TO-220FP
6000
原裝正品，支持實單
 詢價
F
22+
TO-220FP
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
FAIRCHILD
23+
TO-220F
9526
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
24+
TO-220F
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
VB
TO-220FP
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價
更多IRFS620供應(yīng)商 更新時間2024-10-26 19:10:00

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