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IRFW620B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL620

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=5.2A)

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL620

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 N

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.8? ID=5A FEATURES ?Logic-LevelGateDrive ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.609?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL620A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRL620PBF

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620PBF

HEXFETPOWERMOSFET

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFW620B

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
23+
TO-263
9526
詢價(jià)
仙童
05+
TO-263
3800
原裝進(jìn)口
 詢價(jià)
FAIRCHIL
23+
TO-263
9500
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAIRCHILDRCHILD
2022+
SOT263
29880
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
FAIRCHILDRCHILD
23+
SOT263
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
FAIRCHILD
2025+
TO-263
4675
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價(jià)
FAIRCHILDRCHILD
23+
SOT263
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
FAIRCHILDRCHILD
23+
SOT263
7000
詢價(jià)
FSC/ON
23+
原包裝原封 □□
1600
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫(kù)存
 詢價(jià)
更多IRFW620B供應(yīng)商 更新時(shí)間2025-3-21 10:34:00

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