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IIRFR24N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤95m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR24N15D

HighfrequencyDC-DCconverters

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR24N15D

HEXFETPowerMOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFR24N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤95m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR24N15DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFR24N15DPBF

SMPSMOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR24N15DPBF

HEXFET?PowerMOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent ?Lead-Free Applications ?HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFU24N15D

HEXFETPowerMOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFU24N15D

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-251(IPAK)packaging ?Highspeedswitching ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?DC-DCconverters ?Motorcontrol ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU24N15DPBF

SMPSMOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU24N15DPBF

HEXFET?PowerMOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent ?Lead-Free Applications ?HighfrequencyDC-DCconverters

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR24N15DTRRP

  • 功能描述：

    MOSFET MOSFET, 150V, 24A, 95 mOhm, 30 nC Qg, D-Pak

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IR
2016+
TO-252
3000
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IR
23+
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90000
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IR
22+
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32350
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IR
23+
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50000
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IR
2022
TO-252
80000
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IR
23+
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10000
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IR
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IR
22+
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6000
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IR
TO-252
6000
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更多IRFR24N15DTRRP供應(yīng)商 更新時(shí)間2024-10-26 11:08:00

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