首頁 >IRFU24N15DPBF>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFU24N15DPBF | HEXFET?Power MOSFET Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent ?Lead-Free Applications ?HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | |
IRFU24N15DPBF | SMPS MOSFET Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
N-ChannelMOSFETTransistor ?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤95m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor ?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤95m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent ?Lead-Free Applications ?HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
SMPSMOSFET Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters ?Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRFU24N15DPBF
- 制造商:
International Rectifier
- 功能描述:
MOSFET N 150V 24A I-PAK
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-251 |
735 |
詢價(jià) | |||
IR |
2016+ |
TO-251 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
VBSEMI/臺(tái)灣微碧 |
23+ |
I-PAK |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
I |
23+ |
I-PAK |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
VBSEMI/臺(tái)灣微碧 |
23+ |
TO251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VB |
21+ |
I-PAK |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
I |
22+ |
I-PAK |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
VB |
I-PAK |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) |
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