首頁 >IRFR2905ZTRPBF>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IRFU2905Z

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=14.5m? ID=42A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionope

IRF

International Rectifier

IRFU2905Z

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU2905Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU2905ZPBF

HEXFET?PowerMOSFET(VDSS=55V,RDS(on)=14.5m廓,ID=42A)

VDSS=55V RDS(on)=14.5m? ID=42A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionope

IRF

International Rectifier

IRFU2905ZPBF

AUTOMOTIVEMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRLR/U2905

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR2905

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR2905

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRLR2905

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLR2905

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRLR2905PBF

HEXFETPowerMOSFET

VDSS=55V RDS(on)=0.027? ID=42A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRF

International Rectifier

IRLR2905PBF

Logic-LevelGateDrive

IRF

International Rectifier

IRLR2905TR

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheUMWIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTec

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRLR2905TR

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRLR2905TRPBF

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRLR2905TRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRLR2905Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRLR2905Z

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRLR2905Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLR2905ZPBF

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFR2905ZTRPBF

  • 功能描述：

    MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon Technologies
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IR
15+
原廠原裝
12000
進口原裝現(xiàn)貨假一賠十
 詢價
IR
2020+
TO-252
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
Infineon(英飛凌)
23+
TO-252
9203
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
24+
TO-252
500907
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
INFINEON/英飛凌
23+
TO-252
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低
 詢價
IR
24+
TO-252
7500
詢價
IR
17+
TO-252
6200
詢價
更多IRFR2905ZTRPBF供應(yīng)商 更新時間2025-1-14 16:05:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多