首頁 >IRFR214PBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR214PBF | HEXFET? Power MOSFET HEXFET?PowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR214) ?StraightLead(IRFU214) ?AvailableinTape&Reel ?FastSwitching ?EaseofParalleling ?Lead-Free | IRF International Rectifier | IRF | |
IRFR214PBF | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFR214PBF | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR214PBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=2.2A) HEXFET?PowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=2.2A | IRF International Rectifier | IRF | ||
2.2A,250V,2.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareadvancedpowerMOSFETsaredesignedforuseinapplicationssuchasswitchingregulators | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
IRFR214PBF
- 功能描述:
MOSFET N-Chan 250V 2.2 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
D-Pak |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
VISHAY(威世) |
23+ |
TO-252 |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
VISHAY/威世 |
23+ |
TO-252 |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低 |
詢價 | ||
IR |
2016+ |
TO-252 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
VishayPCS |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
22+23+ |
TO-252 |
28071 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
Vishay PCS |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
23+ |
DPAK |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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