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IRFR110A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR110A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR110ATM

N-channel Enhancement Mode Power MOSFET

Features ?VDS=100V,ID=18.1A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRFR110ATM

Advanced Power MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR110PBF

HEXFET?PowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRFR110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR110PBF

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR110TR

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR110TR

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR110A

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    Advanced Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
24+
TO 252
155816
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
FAIRCHILD
23+
TO-252
9526
詢價(jià)
IR
05+
TO-252
15000
原裝進(jìn)口
 詢價(jià)
FSC
17+
TO-252
6200
詢價(jià)
IR
23+
原廠原裝
3000
全新原裝
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAIRCHILD
19+
TO-252
74949
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
FAIRCHILD
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
FAIRCHILD/仙童
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
FAIRCHILD/仙童
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多IRFR110A供應(yīng)商 更新時(shí)間2025-4-26 17:10:00

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