首頁(yè) >IRFR-120>規(guī)格書(shū)列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

IRFR-120

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR120ZPBF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

IRF

International Rectifier

IRFR120ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR120ZPBF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR120ZPBF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

IRFRU120A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFRU120A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU120

8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRFU120

HEXFETPOWERMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str

IRF

International Rectifier

IRFU120

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU120

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

IRFU120

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU120

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR120,SiHFR120) ?Straightlead(IRFU120,SiHFU120) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU120A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU120ATU

AvalancheRuggedTechnology

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU120N

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFU120N

SurfaceMount(IRFR120N)

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU120N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU120NPBF

FastSwitching

VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFR-120

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-252
100000
詢價(jià)
IR
22+
TO-252
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
TO-252
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
TO-252
7000
詢價(jià)
IR
2020+
TO-252
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
FAIRCHILD
05+
原廠原裝
4340
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
Fairchild/ON
21+
TO2523 DPak (2 Leads + Tab) SC
13880
公司只售原裝,支持實(shí)單
詢價(jià)
Fairchild/ON
23+
TO2523 DPak (2 Leads + Tab) SC
9000
原裝正品,支持實(shí)單
詢價(jià)
ON Semiconductor
2022+
TO-252-3,DPak(2 引線 + 接片
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
詢價(jià)
IR
12+
TO-252(DPAK)
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
更多IRFR-120供應(yīng)商 更新時(shí)間2024-10-26 16:30:00