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IRFPC50

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPC50

Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

IRF

International Rectifier

IRFPC50A

Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A)

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSu

IRF

International Rectifier

IRFPC50A

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?EffectiveCossSpecified ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?Switch

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPC50A

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPC50A_V01

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPC50APBF

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?EffectiveCossSpecified ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?Switch

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPC50LC

Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFPC50LC

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Thes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPC50LC

Power MOSFET

FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Isolatedcentralmountinghole ?DynamicdV/dtrating ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/d

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    IRFPC50

  • 功能描述：

    MOSFET N-Chan 600V 11 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO 247
161332
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
23+
TO-247AC
19526
詢價
IR
06+
TO-247
1200
全新原裝 絕對有貨
 詢價
IR
24+
TO-3P
1000
詢價
IR
23+
TO-3P
9960
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
IR
2015+
TO-247AC
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
IR
24+
原廠封裝
3162
原裝現(xiàn)貨假一罰十
 詢價
IR
17+
TO-247
6200
100%原裝正品現(xiàn)貨
 詢價
更多IRFPC50供應(yīng)商 更新時間2025-3-19 19:10:00

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