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IRFN250SMD

N-CHANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRFP250

N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRFP250

N-ChannelPowerMosfets

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP250

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP250

N-Channel(HexfetTransistors)

IRF

International Rectifier

IRFP250

PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP250

StandardPowerMOSFET

N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols

IXYS

IXYS Corporation

IRFP250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP250

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP250

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP250

ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRFP250

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFP250

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP250

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?EaseofParalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP250A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.071Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP250A

ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRFP250A

iscN-ChannelMOSFETTransistor

DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP250B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP250B

ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFN250SMD

  • 制造商：

    SEME-LAB

  • 制造商全稱：

    Seme LAB

  • 功能描述：

    N-CHANNEL POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
N/A
23+
TO220
29388
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
CHINA
22+
SMD-1
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
 詢價(jià)
IR
22+
SMD-1
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
INFINEON
23+
C-CCN-3
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價(jià)
IR
23+
SMD-1
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
SMD-1
7000
詢價(jià)
IR
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
22+
NA
30000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
21+
SMD-1
12588
原裝正品,自己庫存 假一罰十
 詢價(jià)
更多IRFN250SMD供應(yīng)商 更新時(shí)間2025-1-3 9:01:00

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