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IRFM260

TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETs

IRF

International Rectifier

IRFM260

Simple Drive Requirements

IRF

International Rectifier

IRFM260_15

Simple Drive Requirements

IRF

International Rectifier

IRFP260

PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP260

StandardPowerMOSFET-N-ChannelEnhancementMode

Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes

IXYS

IXYS Corporation

IRFP260

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP260

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP260

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP260

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP260M

N-ChannelMOSFETTransistor

·DESCRITION ·HighSpeedPowerSwitching ·FEATURES ·Staticdrain-sourceon-resistance:RDS(on)≤40m? ·Enhancementmode: ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFM260

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 200V 35A 3-Pin(3+Tab) TO-254AA

  • 功能描述：

    TRANS MOSFET N-CH 200V 35A 3PIN TO-254AA - Bulk

  • 功能描述：

    Single N-Channel 200 V 250 W 230 nC Hexfet Power Mosfet Flange Mount - TO-254AA

  • 功能描述：

    N CH MOSFET, 200V, 35A, TO-254AA; Transistor

  • Polarity：

    N Channel; Continuous Drain Current

  • Id：

    35A; Drain Source Voltage

  • Vds：

    200V; On Resistance

  • Rds(on)：

    60mohm; Rds(on) Test Voltage

  • Vgs：

    10V; Threshold Voltage Vgs

  • Typ：

    4V; No. of

  • Pins：

    3 ;RoHS

  • Compliant：

    No

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
17+
TO-254A
4500
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
IR
11+
TO-254A
153
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
24+
SMD
219
“芯達(dá)集團(tuán)”專營(yíng)軍工百分之百原裝進(jìn)口
 詢價(jià)
IR
24+
N/A
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
IR
24+
TO-220
200
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IR
專業(yè)軍工
NA
1000
只做原裝正品軍工級(jí)部分訂貨
 詢價(jià)
IR
1719
555
原裝正品
 詢價(jià)
IR
23+
TO-254A
90000
一定原裝正品
 詢價(jià)
IR
24+
TO-220
66800
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價(jià)
更多IRFM260供應(yīng)商 更新時(shí)間2025-6-12 14:00:00

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