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IRFL640PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS640

Improvedinductiveruggedness

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFS640

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

IRFS640

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

IRFS640

SEMICONDUCTORS

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etc未分類(lèi)制造商etc2未分類(lèi)制造商

IRFS640

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS640A

Improvedgatecharge

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFS640A

RuggedGateOxideTechnology

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowerRDS(ON):0.144(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS640A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS640B

200VN-ChannelMOSFET

DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenminimizeon-stateresistance,providesuperiorswitchingespeciallytailoredtominimizeon-stateresistance,provid

TGS

Tiger Electronic Co.,Ltd

IRFS640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRFW640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL640

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL640

HEXFETPowerMOSFET

IRF

International Rectifier

IRL640

HEXFETPowerMosfet

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRL640

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL640A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.18? ID=18A FEATURES ?Logic-LevelGateDrive ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=20

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRFL640PBF

  • 制造商:

    VISHAY

  • 制造商全稱(chēng):

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IOR
24+
2987
絕對(duì)全新原裝現(xiàn)貨供應(yīng)!
詢(xún)價(jià)
IR
22+
N/A
6000
終端可免費(fèi)供樣,支持BOM配單
詢(xún)價(jià)
IR
2023+
SOT-223
4835
全新原廠(chǎng)原裝產(chǎn)品、公司現(xiàn)貨銷(xiāo)售
詢(xún)價(jià)
IR
23+
N/A
8000
只做原裝現(xiàn)貨
詢(xún)價(jià)
IR
23+
N/A
7000
詢(xún)價(jià)
IR
23+
SOT-223
19526
詢(xún)價(jià)
IR
24+
SOT-223
11200
新進(jìn)庫(kù)存/原裝
詢(xún)價(jià)
IOR
05/06+
SOT223
371
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
詢(xún)價(jià)
IR
11+
SOT-223
6000
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨
詢(xún)價(jià)
VISHAY
23+
SOT-223
20000
原裝正品,假一罰十
詢(xún)價(jià)
更多IRFL640PBF供應(yīng)商 更新時(shí)間2025-1-17 15:29:00