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IRFIZ48

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A)

PowerMOSFET(Vdss=60VRds(on)=0.018ohmId=37A)

IRF

International Rectifier

IRFIZ48

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFIZ48

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFIZ48G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditional?insulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIZ48G

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A)

PowerMOSFET(Vdss=60VRds(on)=0.018ohmId=37A)

IRF

International Rectifier

IRFIZ48GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditional?insulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIZ48N

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFIZ48V

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFIZ48V

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFIZ48VPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFIZ48G

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFIZ48G

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

IRFIZ48G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIZ48G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIZ48G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIZ48G_09

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIZ48G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIZ48GPBF

HEXFET? Power MOSFET

IRF

International Rectifier

IRFIZ48GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIZ48GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    IRFIZ48

  • 制造商:

    Vishay Intertechnologies

  • 功能描述:

    IR DOES NOT RECOGNIZE P/N

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
15+
TO-220F
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
24+
TO-220
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
IR
23+
TO
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
INTERNATIONA
05+
原廠原裝
5166
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
IR
23+
TO-220F
9896
詢價(jià)
IR
16+
TO220
450
原裝現(xiàn)貨假一罰十
詢價(jià)
更多IRFIZ48供應(yīng)商 更新時(shí)間2025-1-6 9:02:00