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IRFIBC20

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?IsolatedPackage ?HighVoltageIsolation=2.5KVRMS ?SinktoLeadCreepageDist.=4.8

IRF

International Rectifier

IRFIBC20G

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?IsolatedPackage ?HighVoltageIsolation=2.5KVRMS ?SinktoLeadCreepageDist.=4.8

IRF

International Rectifier

IRFIBC20G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicati

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC20G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFIBC20GPBF

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?IsolatedPackage ?HighVoltageIsolation=2.5KVRMS ?SinktoLeadCreepageDist.=4.8

IRF

International Rectifier

IRFIBC20GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicati

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC20GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFIBC20G

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFIBC20

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

供應商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-220F
10000
專做原裝正品,假一罰百!
 詢價
IR
2021+
TO-220F
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
VB
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
22+
TO-220
6000
十年配單,只做原裝
 詢價
I
23+
TO-220F
6000
原裝正品，支持實單
 詢價
IR
22+
TO-220F
4500
全新原裝品牌專營
 詢價
INFINEON/英飛凌
23+
TO-220F
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
I
22+
TO-220F
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
IR
23+
TO-220F
8000
只做原裝現(xiàn)貨
 詢價
更多IRFIBC20供應商 更新時間2025-1-6 9:01:00

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