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IRFIBC20

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?IsolatedPackage ?HighVoltageIsolation=2.5KVRMS ?SinktoLeadCreepageDist.=4.8

IRF

International Rectifier

IRFIBC20G

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?IsolatedPackage ?HighVoltageIsolation=2.5KVRMS ?SinktoLeadCreepageDist.=4.8

IRF

International Rectifier

IRFIBC20G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC20G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFIBC20GPBF

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?IsolatedPackage ?HighVoltageIsolation=2.5KVRMS ?SinktoLeadCreepageDist.=4.8

IRF

International Rectifier

IRFIBC20GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC20GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFIBC20G

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFIBC20

  • 制造商：

    IRF

  • 制造商全稱(chēng)：

    International Rectifier

  • 功能描述：

    Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
 詢(xún)價(jià)
IR
23+
TO-220F
10000
專(zhuān)做原裝正品,假一罰百!
 詢(xún)價(jià)
IR
2447
TO-220F
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
VB
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
22+
TO-220
6000
十年配單,只做原裝
 詢(xún)價(jià)
I
23+
TO-220F
6000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
IR
22+
TO-220F
4500
全新原裝品牌專(zhuān)營(yíng)
 詢(xún)價(jià)
INFINEON/英飛凌
23+
TO-220F
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢(xún)價(jià)
I
22+
TO-220F
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
IR
23+
TO-220F
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
更多IRFIBC20供應(yīng)商 更新時(shí)間2025-3-17 14:42:00

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