首頁 >IRFIB5N65A>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFIB5N65A | Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFIB5N65A | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A) | IRF International Rectifier | IRF | |
IRFIB5N65A | iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
IRFIB5N65A | Uninterruptible Power Supply | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SMPS MOSFET | IRF International Rectifier | IRF | ||
Electronicballast | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
Electronicballast | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES | KECKEC CORPORATION KEC株式會社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES | KECKEC CORPORATION KEC株式會社 | KEC | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Lowgatecharge. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelSuperJunctionPowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
N-ChannelSuperJunctionPowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
5.0A650VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
5.0A650VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
5.0A650VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
5.0A650VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ |
詳細參數(shù)
- 型號:
IRFIB5N65A
- 功能描述:
MOSFET N-Chan 650V 5.1 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2015+ |
TO-220F |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
IR |
17+ |
TO-220F |
6200 |
詢價 | |||
IR |
23+ |
TO-220Fu |
7600 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
16+ |
原廠封裝 |
428 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
詢價 | |||
IR |
1726+ |
TO-220F |
6528 |
只做進口原裝正品現(xiàn)貨,假一賠十! |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
23+ |
TO-220F |
10000 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
2020+ |
TO-220F |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |
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