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IRFI740G

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A)

Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp

IRF

International Rectifier

IRFI740G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thir

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GLC

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.7A)

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

IRF

International Rectifier

IRFI740GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GLCPBF

HEXFET?PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

IRF

International Rectifier

IRFI740GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GLCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GPBF

HEXFETPowerMOSFET

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFI740BTU

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FAIRCHILD
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
Fairchild/ON
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
FAIRCHILD/仙童
2022
TO-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
Fairchild/ON
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
Fairchild/ON
23+
TO2623 Long Leads I2Pak TO262A
9000
原裝正品，支持實(shí)單
 詢價(jià)
FAIRCHILD
10+
TO-262
20
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ON Semiconductor
2022+
TO-262-3,長(zhǎng)引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
FAIRCHILD/仙童
23+
NA/
3270
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
FAIRCHILD
23+
TO-262
10000
原裝正品現(xiàn)貨
 詢價(jià)
更多IRFI740BTU供應(yīng)商 更新時(shí)間2025-2-14 10:59:00

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