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IRFI740G

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A)

Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp

IRF

International Rectifier

IRFI740G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCr

VishayVishay Siliconix

威世科技威世科技半導體

IRFI740G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thir

VishayVishay Siliconix

威世科技威世科技半導體

IRFI740GLC

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.7A)

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

IRF

International Rectifier

IRFI740GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFI740GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI740GLCPBF

HEXFET?PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

IRF

International Rectifier

IRFI740GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFI740GLCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFI740GPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI740GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCr

VishayVishay Siliconix

威世科技威世科技半導體

IRFS740

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

IRFS740

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS740A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=400V ■LowerRDS(ON):0.437Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS740A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS740B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS740B

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFW740

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFW740A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFW740B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號:

    IRFI740BTU

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FAIRCHILD
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
Fairchild/ON
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
詢價
FAIRCHILD/仙童
2022
TO-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
Fairchild/ON
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原裝,支持實單
詢價
Fairchild/ON
23+
TO2623 Long Leads I2Pak TO262A
9000
原裝正品,支持實單
詢價
FAIRCHILD
10+
TO-262
20
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ON Semiconductor
2022+
TO-262-3,長引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
FAIRCHILD/仙童
23+
NA/
3270
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
FAIRCHILD
23+
TO-262
10000
原裝正品現(xiàn)貨
詢價
更多IRFI740BTU供應商 更新時間2025-1-7 11:00:00