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IRFF120中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

IRFF120
廠商型號

IRFF120

功能描述

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

文件大小

156.74 Kbytes

頁面數(shù)量

3

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡稱

NJSEMI新澤西半導(dǎo)體

中文名稱

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-3 22:30:00

IRFF120規(guī)格書詳情

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 6.0A, 100V

? rDS(ON) = 0.300?

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    IRFF120

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 100V 6A 3-Pin TO-39

  • 功能描述:

    TRANS MOSFET N-CH 100V 6A 3PIN TO-39 - Bulk

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    HEXFET, HI-REL - Bulk

  • 功能描述:

    N CHANNEL MOSFET 100V 6A TO-

  • 功能描述:

    MOSFET, N, TO-39

  • 功能描述:

    Single N-Channel 100 V 20 W 18 nC Hexfet Power Mosfet Through Hole - TO-39-3

  • 功能描述:

    N CHANNEL MOSFET, 100V, 6A TO-205AF; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    6A; Drain Source Voltage

  • Vds:

    100V; On Resistance

  • Rds(on):

    300mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V ;RoHS

  • Compliant:

    No

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