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IRF1407

Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1407

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1407L

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407LPBF

HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407LPbF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1407PBF

HEXFET? Power MOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

IRF

International Rectifier

IRF1407S

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407SPBF

HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407SPBF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1407STRLPbF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF1407

  • 制造商：

    INTRSL

  • 制造商：

    International Rectifier

  • 功能描述：

    N CH MOSFET, 75V, 130A, TO-220AB, Transistor Polarity

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
13+
TO-220/TO-263
10000
深圳市勤思達(dá)科技有限公司主營IR系列全新原裝正品,現(xiàn)貨供應(yīng)IRF1407,歡迎咨詢洽談。
 詢價(jià)
IR
21+
TO220
12000
原廠代理渠道進(jìn)口原裝現(xiàn)貨QQ：505546343 電話：17621
 詢價(jià)
INFINEON/英飛凌
23+
TO-220
15000
原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
24+
TO-220-3
8866
詢價(jià)
IR
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
 詢價(jià)
IR
24+
TO220
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
2020+
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
IR
1738+
TO-220
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
更多IRF1407供應(yīng)商 更新時(shí)間2025-3-30 11:04:00

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