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IRF1407LPBF

HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407LPbF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1407PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1407PBF

HEXFET?PowerMOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

IRF

International Rectifier

IRF1407S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1407S

PowerMOSFET(Vdss=75V,Rds(on)=0.0078??Id=100A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407SPBF

HEXFET?PowerMOSFET(VDSS=75V,RDS(on)=0.0078廓,ID=100A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1407SPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1407STRLPbF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IRF1407LPBF

  • 制造商：

    International Rectifier

供應商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
TO-262
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
2016+
TO-262
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
24+
TO-262-3
2010
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
 詢價
IR
24+
TO-262
5000
只做原裝公司現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
2020+
TO-262
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
 詢價
INTERNATIONAL RECTIFIER
07+01
119
公司優(yōu)勢庫存 熱賣中!
 詢價
更多IRF1407LPBF供應商 更新時間2025-3-29 16:12:00

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