零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
2.2Aand2.5A,450Vand500V,3.0and4.0Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforappli | Intersil Intersil Corporation | Intersil | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
N-ChannelPowerMOSFETs,3.0A,450V/500V
| FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·siliconGateforfastswitchingatelevate ·rugged ·lowdriverequirements ·easeofparalleling APPLICATIONS ·highspeedapplicationssuchasSwitchingpowersupplies,ACandDCmotorcontrolsrelayandsolenoiddriver. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
2.2Aand2.5A,450Vand500V,3.0and4.0Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=0.37A) VDSS=500V RDS(on)=3.0? ID=0.37A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)500 RDS(on)(Ω)VGS=10V3.0 Qg(Max.)(nC)24 Qgs(nC)3.3 Qgd(nC)13 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET VDS(V)500 RDS(on)(Ω)VGS=10V3.0 Qg(Max.)(nC)24 Qgs(nC)3.3 Qgd(nC)13 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價 | |||
IR |
23+ |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
IR |
23+ |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | |||
IR |
23+ |
7000 |
詢價 | ||||
JRC |
23+ |
10000 |
原裝正品現(xiàn)貨 |
詢價 | |||
PICO |
2023+ |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價 | |||
IR |
21+ |
TO |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
TO |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
23+ |
TO |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
2022 |
TO |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
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