首頁 >IRF230>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IRF230

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

IRF230

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF230

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF230

N-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導體

IRF230

N-Channel Power MOSFETs, 12A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF230

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF230

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET

SEME-LAB

Seme LAB

IRF230

High Power, High Speed Applications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF230

N-Channel Power Mosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF230-233

N-Channel Power MOSFETs, 12A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFE230

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

PartNumberBVDSSRDS(on)ID IRFE230200V0.40?5.5A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerst

IRF

International Rectifier

IRFE230

SimpleDriveRequirements

IRF

International Rectifier

IRFF230

5.5A,200V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF230

N-CHANNELENHANCEMENT

SEME-LAB

Seme LAB

IRFR230

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatest processingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedand

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR230A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) W m

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFR230A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR230B

200VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulsein

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS230

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRF230

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3

  • 功能描述：

    TRANS MOSFET N-CH 200V 9A 2PIN TO-204AA - Bulk

  • 功能描述：

    MOSFET N TO-3

  • 功能描述：

    MOSFET, N, TO-3

  • 功能描述：

    Single N-Channel 200 V 75 W 39 nC Hexfet Transistores Through Hole - TO-204AA/AE

  • 功能描述：

    N CHANNEL MOSFET, 200V, 9A TO-204AA; Transistor

  • Polarity：

    N Channel; Continuous Drain Current

  • Id：

    9A; Drain Source Voltage

  • Vds：

    200V; On Resistance

  • Rds(on)：

    400mohm; Rds(on) Test Voltage

  • Vgs：

    10V; Threshold Voltage Vgs

  • Typ：

    4V ;RoHS

  • Compliant：

    No

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-03
1280
公司現(xiàn)貨原裝實單必成
 詢價
IR
24+
TO-03
13500
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網
 詢價
HAR
05+
原廠原裝
4295
只做全新原裝真實現(xiàn)貨供應
 詢價
IR/MOT
16+
TO-3
1500
原裝現(xiàn)貨假一罰十
 詢價
IR/MOSPEC
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
MOSPEC
24+
原裝
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
IR
23+
TO-3
3000
特價庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
更多IRF230供應商 更新時間2024-12-23 11:00:00

相關規(guī)格書

更多

相關庫存

更多