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IRF710

2.0A,400V,3.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF710

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF710

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710

IRF710-713MTP2N35/2N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF710

N-ChannelMosfetTransistor

·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF710

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF710

PowerMOSFETFEATURES

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710A

AdvancedPowerMOSFET(400V,3.6ohm,2A)

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowRDS(ON):2.815?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF710A

iscN-ChannelMOSFETTransistor

?DESCRITION ?designedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesetypescanbeoperateddirectlyfromintegratedcircuits. ?FEATU

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF710B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF710PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF710PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710PBF

PowerMOSFETFEATURES

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710S

HEXFETPowerMOSFET

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF710S

SurfaceMount

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710SPBF

HEXFET?PowerMOSFET

400VN-ChannelMOSFET

IRF

International Rectifier

IRFI710B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    IR-710

  • 功能描述：

    熱成像器

  • 10：

    1 IR Thermometer

  • RoHS：

    否

  • 制造商：

    Fluke

  • 溫度范圍：

    - 20 C to + 600 C

  • 分辨率：

    280 X 210

  • 靈敏度：

    0.05 C

  • 準確性：

    2 %

  • 顯示器類型：

    LCD

供應(yīng)商型號品牌批號封裝庫存備注價格
IOR
24+
SOP-8
1200
詢價
IOR
24+
SMD-8
3200
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
 詢價
IR
19+
SOP
32000
原裝正品,現(xiàn)貨特價
 詢價
IR
21+
SOP
7540
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
IR
22+
SOP
8000
原裝正品支持實單
 詢價
IR
22+
SOP
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
IR
22+
SOP
6000
終端可免費供樣,支持BOM配單
 詢價
IOR
23+
SOP-8
41093
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
IR
23+
SOP
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
SOP
7000
詢價
更多IR-710供應(yīng)商 更新時間2025-1-7 16:30:00

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