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IR710PBF

HEXFET? Power MOSFET

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF710

2.0A,400V,3.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF710

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導體

IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF710

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF710

IRF710-713MTP2N35/2N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF710

N-ChannelMosfetTransistor

·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF710

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF710

PowerMOSFETFEATURES

VishayVishay Siliconix

威世科技威世科技半導體

IRF710A

AdvancedPowerMOSFET(400V,3.6ohm,2A)

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowRDS(ON):2.815?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF710A

iscN-ChannelMOSFETTransistor

?DESCRITION ?designedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesetypescanbeoperateddirectlyfromintegratedcircuits. ?FEATU

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF710B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF710PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF710PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導體

IRF710PBF

PowerMOSFETFEATURES

VishayVishay Siliconix

威世科技威世科技半導體

IRF710S

HEXFETPowerMOSFET

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF710S

SurfaceMount

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid

VishayVishay Siliconix

威世科技威世科技半導體

IRF710S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導體

IRF710SPBF

HEXFET?PowerMOSFET

400VN-ChannelMOSFET

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IR710PBF

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    HEXFET㈢ Power MOSFET

供應商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
21+
12588
原裝正品,自己庫存 假一罰十
 詢價
IR
23+
TO-220
3000
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
F7103
SOP-8
200
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
23+
原裝正品現(xiàn)貨
10000
SOP-8
 詢價
IOR
2023+
PLCC32
50000
原裝現(xiàn)貨
 詢價
IR
22+
SOP8
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
SOP8
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
SOP8
7000
詢價
更多IR710PBF供應商 更新時間2024-10-26 9:02:00

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