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IQXO-610

Crystal Clock Oscillator Specification

IQD

IQD Frequency Products Ltd

IRF610

3.3A,200V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF610

N-ChannelPowerMOSFETs,3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF610

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF610

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF610

iscN-ChannelMOSFETTransistor

?DESCRITION ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers. ?FEATURES ?LowRDS(on) ?VGSRatedat±20V ?SiliconGateforFastSwitchingSpeed ?Rugged ?LowDrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF610

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF610

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF610

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF610

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF610

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導體

IRF610A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF610A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?LowRDS(on)=1.25Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?3.3A,200V,RDS(on)=1.5?@VGS=10V ?Lowgatecharge(typical7.2nC) ?LowCrss(typical6.8pF) ?Fastswitch

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF610L

Surfacemount

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半導體

IRF610L

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導體

IRF610LPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF610PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF610PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF610PBF

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

供應商型號品牌批號封裝庫存備注價格
C-MAC
23+
DIP-4
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
C-MAC
23+
DIP-4
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
C-MAC
23+
DIP-4
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
N/A
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
A
24+
b
6
詢價
IR
23+
TO-220
8000
原裝正品
 詢價
IR
22+
TO220
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO220
7000
詢價
更多IQXO-610供應商 更新時間2024-10-27 11:10:00

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