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IRF610中文資料INTERSIL數(shù)據(jù)手冊PDF規(guī)格書
IRF610規(guī)格書詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 3.3A, 200V
? rDS(ON) = 1.500?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產(chǎn)品屬性
- 型號:
IRF610
- 功能描述:
MOSFET N-Chan 200V 3.3 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
IR |
24+ |
NA/ |
456 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
BGA-4 |
20000 |
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??! |
詢價 | ||
IR |
23+ |
NA |
10658 |
專業(yè)電子元器件供應鏈正邁科技特價代理QQ1304306553 |
詢價 | ||
IR |
24+ |
TO-220AB |
27500 |
原裝正品,價格最低! |
詢價 | ||
IR |
24+/25+ |
90 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
2015+ |
TO-220 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
24+ |
TO-220 |
100000 |
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718 |
詢價 | ||
INFINEON/英飛凌 |
96+ |
TO-220 |
10 |
原裝進口無鉛現(xiàn)貨 |
詢價 | ||
MOT |
23+ |
DIP-16 |
6500 |
全新原裝假一賠十 |
詢價 |
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