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IPI530N15N3

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI530N15N3G

OptiMOS3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;HalogenFree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI530N15N3G

N-channel, normal level

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD530N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIPP530N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB530N15N3

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB530N15N3G

N-channel,normallevel

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB530N15N3G

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=53mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB530N15N3G

OptiMOS3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;HalogenFree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD530N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD530N15N3G

N-channel,normallevel

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD530N15N3G

OptiMOS3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;HalogenFree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP530N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP530N15N3G

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=53mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP530N15N3G

N-channel,normallevel

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP530N15N3G

OptiMOS3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant;HalogenFree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPI530N15N3

  • 功能描述:

    MOSFET N-Channel 150V Transistor N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
23+
TO262-3
10000
公司只做原裝正品
詢價(jià)
INFINEON/英飛凌
23+
TO262-3
43000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
INFINEON
23+
TO262-3
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON
23+
TO262-3
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON
23+
TO262-3
7000
詢價(jià)
INFINEON/英飛凌
22+
TO262-3
90669
詢價(jià)
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢價(jià)
INFINE0N
23+
TO-262-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
Infineon
1931+
N/A
493
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詢價(jià)
Infineon(英飛凌)
2112+
PG-TO262-3
115000
500個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
詢價(jià)
更多IPI530N15N3供應(yīng)商 更新時(shí)間2024-12-22 14:30:00