首頁(yè) >IPI320N20N3>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IPI320N20N3 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
OptiMOS3 Power Transistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3 Power-Transistor Features N-channel, normal level Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3 Power Transistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-TransistorFeaturesN-channel,normallevel Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-TransistorFeaturesN-channel,normallevel Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSTM3Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3PowerTransistor Features ?N-channel,normallevel *ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRos(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealf | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
IPI320N20N3
- 功能描述:
MOSFET N-Channel 200V MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
23+ |
TO262-3 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
INFINEON |
23+ |
TO262-3 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO262-3 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO262-3 |
7000 |
詢價(jià) | |||
INFINEON/英飛凌 |
22+ |
TO262-3 |
91491 |
詢價(jià) | |||
INFINE0N |
23+ |
TO-262-3 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
英飛凌 |
21+ |
PG-TO262-3 |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON/英飛凌 |
22+ |
TO-262 |
5623 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) | ||
Infineon(英飛凌) |
2112+ |
PG-TO262-3 |
105000 |
500個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢價(jià) |
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