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IPA60R125C6

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications ?Loadswitch ?Powermanagement

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA60R125C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R125C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R125C6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R125C6E8191XKSA1

包裝：卷帶（TR） 類別：分立半導體產品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH TO220-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R125C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.125? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustd

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R125C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤125m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPW60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數

  • 型號：

    IPA60R125C6

  • 功能描述：

    MOSFET COOLM

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
2021+
TO-220F
9450
原裝現貨。
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON/英飛凌
21+23+
TO-220FullPAK
18500
16年電子元件現貨供應商 終端BOM表可配單提供樣品
 詢價
INFINEON/英飛凌
24+
N/A
5000
只做正品原裝現貨
 詢價
Infineon(英飛凌)
23+
TO-220F
8145
支持大陸交貨,美金交易。原裝現貨庫存。
 詢價
INFINEON/英飛凌
24+
TO220F
160229
明嘉萊只做原裝正品現貨
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現貨價秒殺全網
 詢價
INFINEON
17+
TO-220F
6200
100%原裝正品現貨
 詢價
INFINEON
2016+
TO-220F
6528
房間原裝進口現貨假一賠十
 詢價
INFINEO
2020+
TO220F
82
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可
 詢價
更多IPA60R125C6供應商 更新時間2024-10-24 15:21:00

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