首頁(yè) >IP210W>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技（中國(guó)）有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技（中國(guó)）有限公司 | ADVANTECH | ||
210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技（中國(guó)）有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技（中國(guó)）有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技（中國(guó)）有限公司 | ADVANTECH | ||
OCXOSpecification | IQD IQD Frequency Products Ltd | IQD | ||
VCTCXOSpecification | IQD IQD Frequency Products Ltd | IQD | ||
PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.60A) DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin | IRF International Rectifier | IRF | ||
0.6A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc | Intersil Intersil Corporation | Intersil | ||
0.6AAND0.45A,150VAND200V,1.5AND2.4OHM,N-CHANNELPOWERMOSFETS TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching | HARRIS Harris Corporation | HARRIS |
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