首頁 >INA220BIDGST>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
INA220BIDGST | High- or Low-Side, Bidirectional Current and Power Monitor | TI1Texas Instruments 德州儀器 | TI1 | |
INA220BIDGST | 包裝:托盤 封裝/外殼:10-TFSOP,10-MSOP(0.118",3.00mm 寬) 功能:電流監(jiān)控器 類別:集成電路(IC) 電流調(diào)節(jié)/管理 描述:IC MONITOR PWR/CURR BIDIR 10MSOP | TI1Texas Instruments 德州儀器 | TI1 | |
CompactIndustrialComputerSystemwith10thGenIntel?Core?iCPUSocket(LGA1200) Features ?Intel?10thGenCore?iCPUsocket-type(LGA1200)withIntel?Q470E/ H420Echipset ?3xindependentdisplays(thirddisplayoutput(DP)viaoptionalcable) ?2xGigaLanand6xUSB3.2 ?2xRS-232/422/485and2xRS232serialports ?1xNVMeM.2(Q470EOnly),2x2.5HDD/SSD,a | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
MachineVisionEdgeSolutionReadyPlatform Features ?IntuitiveGUIwithoutprogrammingskills ?Flexiblelicensingoptionsincludingfull,ID,alignment ?SupportsuptosixGigEvisioncameraswithupto20Mresolutioninmono andbayerformats ?Supportsconditionaloperator,externalAPIforadvancedapplications | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
CompactIndustrialComputerSystemwith6th/7thGenIntel?Core?iCPUSocket(LGA1151) Features ?Intel?6th/7thGenCore?iCPUsocket-type(LGA1151)withIntel?Q170/ H110chipset ?3xindependentdisplays(thirddisplayoutput(DP)viaoptionalcable) ?2xGigaLanand6xUSB3.0(Q170)/4xUSB3.0(H110) ?2xRS-232/422/485and2xRS232serialports ?2x2.5HDD/SSD,a | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
N-CHANNELPOWERMOSFETS FEATURES ?LowRDs | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
4.0Aand5.0A,150Vand200V,0.8and1.2Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
N-ChannelPowerMOSFETs,7A,150-200V N-ChannelPowerMOSFETs7A150-200V | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelPowerMosfets | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
NanosecondSwitchingSpeeds Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
HighSpeedApplications DESCRIPTION ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.8Ω(Max) ?HighSpeedApplications APPLICATIONS ?Switchingpowersupplies | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=0.80A) HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
0.8A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
0.8A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllothesepowerMOSFETsaredesignedforapplicationssuchasswitchingr | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET?PowerMOSFET HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
產(chǎn)品屬性
- 產(chǎn)品編號:
INA220BIDGST
- 制造商:
Texas Instruments
- 類別:
集成電路(IC) > 電流調(diào)節(jié)/管理
- 包裝:
托盤
- 功能:
電流監(jiān)控器
- 感應(yīng)方法:
高/低端
- 精度:
±0.5%
- 電壓 - 輸入:
0V ~ 26V
- 電流 - 輸出:
10mA
- 工作溫度:
-40°C ~ 125°C
- 安裝類型:
表面貼裝型
- 封裝/外殼:
10-TFSOP,10-MSOP(0.118",3.00mm 寬)
- 供應(yīng)商器件封裝:
10-VSSOP
- 描述:
IC MONITOR PWR/CURR BIDIR 10MSOP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI |
21+ |
VSSOP-10 |
18000 |
公司主營TI NXP MAXIM 現(xiàn)貨經(jīng)營 只做原裝 假一罰十 0755-23941053 |
詢價 | ||
TI |
24+ |
標(biāo)準(zhǔn) |
45210 |
熱賣原裝進口 |
詢價 | ||
Texas Instruments |
24+ |
MSOP-10 |
12000 |
原裝正品現(xiàn)貨詢價有驚喜 |
詢價 | ||
TI(德州儀器) |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
TI |
22+ |
VSSOP |
12000 |
詢價 | |||
TI |
23+ |
VSSOP-10 |
6000 |
全新原裝現(xiàn)貨、誠信經(jīng)營! |
詢價 | ||
TI/德州專營 |
VSSOP10 |
9000 |
原裝現(xiàn)貨當(dāng)天可交貨,長期備貨支持BOM配單賬期 |
詢價 | |||
TI |
22+ |
VSSOP-10 |
4700 |
只做原裝 |
詢價 | ||
TI(德州儀器) |
23+ |
VSSOP-10 |
7548 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價 | ||
TI(德州儀器) |
23+ |
VSSOP-10 |
11816 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 |
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