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IMB-130

Intel? Dual-Core AtomTM CedarView Processor D2550/N2600/N2800

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IQXT-130

TCXOSpecification

IQD

IQD Frequency Products Ltd

IR130CSP

Flipky

IRF

International Rectifier

IRF130

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF130

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF130

14A,100V,0.160Ohm,N-ChannelPowerMOSFET

14A,100V,0.160Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

Intersil

Intersil Corporation

IRF130

TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.18ohm,Id=14A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors. Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF130

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導體

IRF130

HighPower,HighSpeedApplications

DESCRIPTION ?DrainCurrentID=14A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS

Features: ?RepetitiveAvalancheRatings ?Dynamicdv/dtRating ?HermeticallySealed ?SimpleDriveRequirements ?EaseofParalleling

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF130

SEMICONDUCTORS

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IRF130SMD

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFE130

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE130

SimpleDriveRequirements

IRF

International Rectifier

IRFF130

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF130

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

GESS

GE Solid State

IRFF130

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF130

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFF130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

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23+
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6500
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FUJI
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1000
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163
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24+
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24000
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SOT-163
23+
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15659
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SOT-163
80000
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富士
23+
TO-247
5000
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22+
SOT163
9600
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23+
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50000
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更多IMB-130供應商 更新時間2024-12-25 22:50:00

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