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IRF130

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF130

14A, 100V, 0.160 Ohm, N-Channel Power MOSFET

14A,100V,0.160Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

Intersil

Intersil Corporation

IRF130

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors. Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF130

N-CHANNEL POWER MOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF130

High Power,High Speed Applications

DESCRIPTION ?DrainCurrentID=14A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF130

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

Features: ?RepetitiveAvalancheRatings ?Dynamicdv/dtRating ?HermeticallySealed ?SimpleDriveRequirements ?EaseofParalleling

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF130

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF130

N-CHANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRF130-133

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF1302

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fast

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF130

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3

  • 功能描述：

    TRANS MOSFET N-CH 100V 14A 2PIN TO-204AA - Bulk

  • 功能描述：

    N CH MOSFET 100V 14A TO-204AA

  • 功能描述：

    N CH MOSFET, 100V, 14A, TO-204AA

  • 功能描述：

    N CH MOSFET, 100V, 14A, TO-204AA; Transistor

  • Polarity：

    N Channel; Continuous Drain Current

  • Id：

    14A; Drain Source Voltage

  • Vds：

    100V; On Resistance

  • Rds(on)：

    180mohm; Rds(on) Test Voltage

  • Vgs：

    10V; Threshold Voltage Vgs

  • Typ：

    4V; No. of

  • Pins：

    2;RoHS

  • Compliant：

    No

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
最新
1000
原裝正品現(xiàn)貨
 詢價(jià)
IR
24+
TO-3
66800
原廠授權(quán)一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力！
 詢價(jià)
IR
23+
TO-3
3200
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
MOTOROLA
23+
原廠封裝
9526
詢價(jià)
F
06+
原廠原裝
4287
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
TO-3
10000
詢價(jià)
IR
24+
TO-3
4650
詢價(jià)
IR/MOT
24+
TO-3
1500
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
TO-3
5000
原裝正品,假一罰十
 詢價(jià)
IR
2015+
TO-3(鐵帽)
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
更多IRF130供應(yīng)商 更新時(shí)間2025-3-23 15:00:00

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