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零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IQXT-130 | TCXO Specification | IQD IQD Frequency Products Ltd | IQD | |
Flipky | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-ChannelPowerMOSFETs,20A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
14A,100V,0.160Ohm,N-ChannelPowerMOSFET 14A,100V,0.160Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar | Intersil Intersil Corporation | Intersil | ||
TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.18ohm,Id=14A) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors. Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFETS FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
HighPower,HighSpeedApplications DESCRIPTION ?DrainCurrentID=14A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS Features: ?RepetitiveAvalancheRatings ?Dynamicdv/dtRating ?HermeticallySealed ?SimpleDriveRequirements ?EaseofParalleling | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET 8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil | ||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω | GESS GE Solid State | GESS | ||
N-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET 8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
A |
24+ |
b |
6 |
詢價(jià) | |||
IR |
22+ |
TO220 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
TO220 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO220 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO220 |
7000 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IQXT-140-12V
- IQXT-140-5V
- IQXT-191
- IQXT-194
- IQXT-200-1
- IQXT-200-3
- IQXT-205-1
- IQXT-205-1-25
- IQXT-205-1-30
- IQXT-205-2
- IQXT-205-2-25
- IQXT-205-2-30
- IQXT-205-3
- IQXT-205-3-25
- IQXT-205-3-30
- IQXT-210
- IQXT-260
- IQXT-272
- IQXT-275
- IQXT-291
- IQXT-312
- IQXT-314
- IQXT-314-2
- IQXT-315
- IQXT-315-2
- IQXT-315-4
- IQXT-315-6
- IQXT-315-8
- IQXT-316
- IQXT-316-2
- IQXT-316-4
- IQXT-316-6
- IQXT-316-8
- IQXT-317
- IQXT-317-2
- IQXT-318
- IQXT-318-10
- IQXT-318-12
- IQXT-318-2
- IQXT-318-4
- IQXT-318-6
- IQXT-318-8
- IQXT-350
- IQXV-100
- IQXV-120
相關(guān)庫(kù)存
更多- IQXT-140-3.3V
- IQXT-190
- IQXT-192
- IQXT-200
- IQXT-200-2
- IQXT-200-4
- IQXT-205-1-18
- IQXT-205-1-28
- IQXT-205-1-33
- IQXT-205-2-18
- IQXT-205-2-28
- IQXT-205-2-33
- IQXT-205-3-18
- IQXT-205-3-28
- IQXT-205-3-33
- IQXT-225
- IQXT-270
- IQXT-274
- IQXT-282
- IQXT-311
- IQXT-313
- IQXT-314-1
- IQXT-314-3
- IQXT-315-1
- IQXT-315-3
- IQXT-315-5
- IQXT-315-7
- IQXT-315-9
- IQXT-316-1
- IQXT-316-3
- IQXT-316-5
- IQXT-316-7
- IQXT-316-9
- IQXT-317-1
- IQXT-317-3
- IQXT-318-1
- IQXT-318-11
- IQXT-318-13
- IQXT-318-3
- IQXT-318-5
- IQXT-318-7
- IQXT-318-9
- IQXT-351
- IQXV-110
- IQXV-190