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IHW15N120R

Reverse Conducting IGBT with monolithic body diode

ReverseConductingIGBTwithmonolithicbodydiode Features: ?PowerfulmonolithicBodyDiodewithverylowforwardvoltage ?Bodydiodeclampsnegativevoltages ?TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW15N120R

HighSpeed 2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW15N120R2

Reverse Conducting IGBT with monolithic body diode

ReverseConductingIGBTwithmonolithicbodydiode Features: ?PowerfulmonolithicBodyDiodewithverylowforwardvoltage ?Bodydiodeclampsnegativevoltages ?TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,te

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW15N120R2

HighSpeed 2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW15N120R3

Reverse conducting IGBT with monolithic body diode

Features: ?Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly ?TRENCHSTOP?technologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW15N120R3

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW15N120R3_15

Material Content Data Sheet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW15N120R2

包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 30A 357W TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW15N120R3FKSA1

包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 30A 254W TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXGA15N120B

HiPerFASTIGBT

VCES=1200V IC25=30A VCE(sat)=3.2V tfi(typ)=160ns Features ?InternationalstandardpackagesJEDECTO-220ABandTO-263AA ?Lowswitchinglosses,lowV(sat) ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers

IXYS

IXYS Corporation

IXGA15N120C

HiPerFASTIGBT

Optimizedfor10-25KHzhardswitchingandupto150KHzresonantswitching Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Lowswitchinglosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCcho

IXYS

IXYS Corporation

IXGH15N120B

HiPerFASTIGBT

Features ●Internationalstandardpackages JEDECTO-268surfaceandJEDECTO-247AD ●Lowswitchinglosses,lowV(sat) ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies(UPS) ●S

IXYS

IXYS Corporation

IXGH15N120C

IGBTLightspeedSeries

VCES=1200V IC25=30A VCE(sat)=3.8V tfi(typ)=115ns Features ?InternationalstandardpackagesJEDECTO-268surfaceandJEDECTO-247AD ?Lowswitchinglosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandro

IXYS

IXYS Corporation

IXGP15N120B

HiPerFASTIGBT

VCES=1200V IC25=30A VCE(sat)=3.2V tfi(typ)=160ns Features ?InternationalstandardpackagesJEDECTO-220ABandTO-263AA ?Lowswitchinglosses,lowV(sat) ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers

IXYS

IXYS Corporation

IXGP15N120C

HiPerFASTIGBT

Optimizedfor10-25KHzhardswitchingandupto150KHzresonantswitching Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Lowswitchinglosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCcho

IXYS

IXYS Corporation

IXGT15N120B

HiPerFASTIGBT

Features ●Internationalstandardpackages JEDECTO-268surfaceandJEDECTO-247AD ●Lowswitchinglosses,lowV(sat) ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies(UPS) ●S

IXYS

IXYS Corporation

IXGT15N120C

IGBTLightspeedSeries

VCES=1200V IC25=30A VCE(sat)=3.8V tfi(typ)=115ns Features ?InternationalstandardpackagesJEDECTO-268surfaceandJEDECTO-247AD ?Lowswitchinglosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandro

IXYS

IXYS Corporation

IXSA15N120B

SSeries-ImprovedSCSOACapability

Features ?InternationalstandardpackagesJEDECTO-220ABandTO-263AA ?Lowswitchinglosses,lowV(sat) ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeandreso

IXYS

IXYS Corporation

IXSH15N120A

IGBT

IXYS

IXYS Corporation

IXSH15N120B

HIGHVoltageIGBT

HIGHVoltageIGBT SSeries-ImprovedSCSOACapability Features ?HighBlockingVoltage ?EpitaxialSilicondriftregion -fastswitching -smalltailcurrent -lowswitchinglosses ?MOSgateturn-onfordrivesimplicity MoldingepoxiesmeetUL94V-0 flammabilityclassif

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號:

    IHW15N120R

  • 功能描述:

    IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 15A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
24+
TO247
8866
詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
SINOPWER
23+
DFN5x6A-8EP
69820
終端可以免費供樣,支持BOM配單!
詢價
INFINEON/英飛凌
23+
P-TO247-3-1
10000
公司只做原裝正品
詢價
INFINEON
22+
TO247
6000
十年配單,只做原裝
詢價
INFINEON
23+
P-TO247-3-1
6000
原裝正品,支持實單
詢價
INFINEON
23+
P-TO247-3-1
8400
專注配單,只做原裝進口現(xiàn)貨
詢價
INFINEON
23+
P-TO247-3-1
8400
專注配單,只做原裝進口現(xiàn)貨
詢價
INFINEON
23+
TO247
7000
詢價
INFINEON/英飛凌
22+
P-TO247-3-1
92004
詢價
更多IHW15N120R供應(yīng)商 更新時間2025-1-14 14:30:00