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IDT71V65803S100PFI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100PFI

包裝：卷帶（TR） 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 100TQFP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65803S100PFI8

包裝：卷帶（TR） 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 100TQFP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BGG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BGGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BQ

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BQG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100BQI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65803S100PFGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMsZBT?Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65803S100BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65803S100PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IDT71V65803S100PFI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    卷帶（TR）

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR（ZBT）

  • 存儲容量：

    9Mb（512K x 18）

  • 存儲器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商器件封裝：

    100-TQFP（14x14）

  • 描述：

    IC SRAM 9MBIT PARALLEL 100TQFP

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
100TQFP
9526
詢價
IDT
23+
100-TQFP(14x14)
9550
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IDT, Integrated Device Technol
21+
100-TQFP(14x14)
56200
一級代理/放心采購
 詢價
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
IDT
22+
100TQFP
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
100TQFP
13880
公司只售原裝,支持實單
 詢價
IDT
23+
100TQFP
9000
原裝正品，支持實單
 詢價
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多IDT71V65803S100PFI供應(yīng)商 更新時間2024-11-20 16:53:00

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