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IDT71V65903S80BGI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDT

Integrated Device Technology, Inc.

71V65903S80BG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80BGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80BQ

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80BQG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80PFGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65903S80BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號：

    IDT71V65903S80BGI

  • 功能描述：

    IC SRAM 9MBIT 80NS 119BGA

  • RoHS：

    否

  • 類別：

    集成電路(IC) >> 存儲器

  • 系列：

    -

  • 標準包裝：

    45

  • 系列：

    - 格式 -

  • 存儲器：

    RAM

  • 存儲器類型：

    SRAM - 雙端口，異步

  • 存儲容量：

    128K（8K x 16）

  • 速度：

    15ns

  • 接口：

    并聯(lián)

  • 電源電壓：

    3 V ~ 3.6 V

  • 工作溫度：

    0°C ~ 70°C

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商設(shè)備封裝：

    100-TQFP（14x14）

  • 包裝：

    托盤

  • 其它名稱：

    70V25S15PF

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
119-PBGA(14x22)
1389
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IDT
22+
119PBGA (14x22)
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
119PBGA (14x22)
13880
公司只售原裝,支持實單
 詢價
IDT
23+
119PBGA (14x22)
9000
原裝正品，支持實單
 詢價
IDT
24+
165-FBGA
6184
原裝現(xiàn)貨
 詢價
IDT
23+
100TQFP
9526
詢價
IDT, Integrated Device Technol
21+
100-TQFP(14x14)
56200
一級代理/放心采購
 詢價
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多IDT71V65903S80BGI供應(yīng)商 更新時間2024-11-20 16:30:00

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