首頁 >IDT71V65703S85BGG>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT |
詳細(xì)參數(shù)
- 型號：
IDT71V65703S85BGG
- 功能描述：
IC SRAM 9MBIT 85NS 119BGA
- RoHS：
是
- 類別：
集成電路(IC) >> 存儲器
- 系列：
-
- 標(biāo)準(zhǔn)包裝：
45
- 系列：
- 格式 -
- 存儲器：
RAM
- 存儲器類型：
SRAM - 雙端口，異步
- 存儲容量：
128K（8K x 16）
- 速度：
15ns
- 接口：
并聯(lián)
- 電源電壓：
3 V ~ 3.6 V
- 工作溫度：
0°C ~ 70°C
- 封裝/外殼：
100-LQFP
- 供應(yīng)商設(shè)備封裝：
100-TQFP（14x14）
- 包裝：
托盤
- 其它名稱：
70V25S15PF
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
119-PBGA(14x22) |
73390 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
IDT |
22+ |
BGA |
5000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IDT |
21+ |
119PBGA (14x22) |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IDT |
23+ |
119PBGA (14x22) |
9000 |
原裝正品，支持實單 |
詢價 | ||
IDT |
24+ |
119-BGA |
2509 |
原裝現(xiàn)貨 |
詢價 | ||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
IDT |
23+ |
165BGA |
9526 |
詢價 | |||
IDT |
23+ |
TQFP |
8659 |
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢. |
詢價 | ||
IDT |
BGAQFP |
6688 |
15 |
現(xiàn)貨庫存 |
詢價 |
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