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IRF224

HEXFETTRANSISTORS

250V1.1ohmHEXFET

IRF

International Rectifier

IRF224

HighSpeedApplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFD224

PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=0.63A)

VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD224

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD224

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD224PBF

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD224PBF

HEXFETPOWERMOSFET(VDSS=250V,RDS(on)=1.1廓,ID=0.63A)

VDSS=250V RDS(on)=1.1? ID=0.63A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD224PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFM224B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR224

PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.8A)

IRF

International Rectifier

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR224

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR224

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR224,SiHFR224) ?Straightlead(IRFU224,SiHFU224) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR224A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR224B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR224PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR224PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFR224PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
QFP
553
詢價(jià)
N/A
2023+環(huán)保現(xiàn)貨
標(biāo)準(zhǔn)封裝
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
詢價(jià)
原廠
2023+
QFP
50000
原裝現(xiàn)貨
詢價(jià)
URMET
2002+
QFP-100
50
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢
詢價(jià)
URMET
24+
DIP-24P
2560
絕對(duì)原裝!現(xiàn)貨熱賣!
詢價(jià)
UFMAT
05+
原廠原裝
6101
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
進(jìn)口原裝
23+
DIP
1063
全新原裝現(xiàn)貨
詢價(jià)
SHARP
TO-252
10265
提供BOM表配單只做原裝貨值得信賴
詢價(jià)
SHARP
2023+
TO-252
5185
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價(jià)
SHARP/夏普
23+
TO252-5
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
更多ICZ-224供應(yīng)商 更新時(shí)間2025-1-16 16:30:00