首頁 >ICO-320-SGT-L>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ICSOCKETSSINGLE&DUALROW.100[2.54]CENTERLINE | ADAM-TECHAdam Technologies, Inc. 亞當科技亞當科技股份有限公司 | ADAM-TECH | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
EasynetworksetupwithNetworkAddressTranslation(NAT) | AXIOMTEKAxiomtek Co., Ltd. 艾訊科技艾訊股份有限公司 | AXIOMTEK | ||
CompactSizeTowerIPCwith12thGenIntel?Core?iCPUSocket(LGA1700)and250WPSU Features ?Intel?12thgenerationCore?i9/i7/i5/i3&Pentium?/Celeron?processor withH610Echipset ?DesignforoperatorIPCandapplicationwithspacelimit ?DualUSB3.2anddualUSB2.0portonbothfrontandrearside ?DualIndependentDisplay(HDMI/DP) ?2lowprofileExpansionslo | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
N-ChannelPowerMOSFETs,3.0A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. ?LowRDs(on) ?VGS | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
StaticDrain-SourceOn-Resistance | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelPowerMOSFETs | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
HEXFET?PowerMOSFET VDSS=55V RDS(on)=8.0m? ID=110A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE | IRF International Rectifier | IRF | ||
0.5A,400V,1.800Ohm,N-ChannelPowerMOSFET Description ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=0.49A) VDSS=400V RDS(on)=1.8? ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=1.8廓,ID=0.49A) VDSS=400V RDS(on)=1.8? ID=0.49A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET 2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil |
詳細參數(shù)
- 型號:
ICO-320-SGT-L
- 制造商:
Samtec Inc
- 功能描述:
CONN DIP SCKT SKT 20 POS 2.54MM SLDR ST TH - Bulk
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMTEC |
新 |
16 |
全新原裝 貨期兩周 |
詢價 | |||
SAMTEC/申泰 |
23+ |
2021 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
SAMTEC/申泰 |
22+24+ |
CONN |
1688 |
16年現(xiàn)貨供應商SAMTEC/申泰連接器 |
詢價 | ||
SAMTEC |
2022+ |
260 |
全新原裝 貨期兩周 |
詢價 | |||
SAMTEC/申泰 |
21+ |
DIP |
1574 |
詢價 | |||
SAMTEC |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
SAMTEC/申泰 |
2023+ |
DIP |
6895 |
原廠全新正品旗艦店優(yōu)勢現(xiàn)貨 |
詢價 | ||
SAMTEC/申泰 |
22 |
DIP |
15000 |
3月31原裝,微信報價 |
詢價 | ||
SAMTEC/申泰 |
24+ |
NA |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
SAMTEC |
06+ |
原廠原裝 |
4735 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 |
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