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IRF320中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF320
廠商型號(hào)

IRF320
功能描述

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
文件大小

67.83 Kbytes
頁面數(shù)量

7 頁
生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)
原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載
更新時(shí)間

2024-10-26 19:00:00

IRF320規(guī)格書詳情

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 2.8A and 3.3A, 350V and 400V

? rDS(ON) = 1.8? and 2.5?

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Majority Carrier Device

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào)：

    IRF320

  • 制造商：

    International Rectifier

  • 功能描述：

    HEXFET, HI-REL - Bulk

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