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首頁 >ICO-640-ZAGG>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IIRF640N	文件：338.66 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IQXO-640	文件：152.86 Kbytes Page：2 Pages	CrystalClockOscillatorSpecification	IQD IQD Frequency Products Ltd	IQD
IQXO-640	文件：157.14 Kbytes Page：7 Pages	Standard1.6x1.2mmcrystaloscillatorinaceramicpackagewithaseamsealedmetallid,hermeticallysealed	IQD IQD Frequency Products Ltd	IQD
IRC640	文件：228.9 Kbytes Page：8 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease	IRF International Rectifier	IRF
IRC640PBF	文件：1.13633 Mbytes Page：9 Pages	HEXFETPOWERMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease	IRF International Rectifier	IRF
IRF640	文件：178.22 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwithbestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredallcommercial-industrialapplicationsatpowerdissipat	IRF International Rectifier	IRF
IRF640	文件：107.08 Kbytes Page：9 Pages	N-CHANNEL200V-0.150ohm-18ATO-220/TO-220FPMESHOVERLAY]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
IRF640	文件：95.09 Kbytes Page：9 Pages	N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
IRF640	文件：140.72 Kbytes Page：5 Pages	N-ChannelPowerMOSFETs,18A,150-200V N-ChannelPowerMOSFETs,18A,150-200V	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF640	文件：916.61 Kbytes Page：10 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF640	文件：132.2 Kbytes Page：7 Pages	18A,200V,0.180Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF640	文件：1.70972 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640	文件：161.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?DrainCurrent–ID=18A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Designedforlowvoltage,highspeedpowerswitching applicationssuch	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF640	文件：994.62 Kbytes Page：6 Pages	N-ChannelEnhancementModePOWERMOSFET Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)	WEITRON Weitron Technology	WEITRON
IRF640	文件：168.93 Kbytes Page：6 Pages	POWERTRMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp	SUNTAC Suntac Electronic Corp.	SUNTAC
IRF640	文件：206.36 Kbytes Page：2 Pages	TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features RepetitiveAvalancheRated FastSwitching EaseofParalleling SimpleDriveRequirements	DCCOM Dc Components	DCCOM
IRF640	文件：106.61 Kbytes Page：3 Pages	NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedpowerswitching,low voltage,relaydriversandgeneralpurposeswitching applications. DC-DC&DC-ACconvertersfortelecom,industrialandlighting equipment. CompliancetoRoHS.	COMSET Comset Semiconductor	COMSET
IRF640	文件：158.63 Kbytes Page：5 Pages	18A200VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp	FCIFirst Components International 戈采戈采企業(yè)股份有限公司	FCI
IRF640	文件：1.94336 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=200V,ID=18A,RDS(ON)	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
IRF640	文件：6.75207 Mbytes Page：7 Pages	PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
ICO-640-ZAGG
制造商：
Samtec Inc
功能描述：
CONN DIP SCKT SKT 40 POS 2.54MM SLDR ST TH - Bulk

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
上海金慶電子技術(shù)有限公司	ICO-648-FST	SAMTEC	新		285	全新原裝貨期兩周	詢價(jià)
深圳市星佑電子有限公司	ICO7942	AMIS	05/06+	TQFP80	1064	全新原裝100真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市英卓爾科技有限公司	ICO7942	AMIS	20+	TQFP80	500	樣品可出,優(yōu)勢(shì)庫存歡迎實(shí)單	詢價(jià)
深圳市一線半導(dǎo)體有限公司	ICO7950	A	24+	b	28		詢價(jià)
深圳市納立科技有限公司	ICODEOWLETIOTLABEL	FGC	三年內(nèi)		1983	納立只做原裝正品13590203865	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IC-ODL	IC-HAUS	23+	optoBGA	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市益百分電子有限公司	IC-OKI/C1192/SO8	OKI	02+	SOP8	2500	原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨	詢價(jià)
北京天陽誠業(yè)科貿(mào)有限公司	I-CONNANOUK	ERSA	23375+	con	7	現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格	詢價(jià)
深圳市芯福林電子科技有限公司	IC-OP177GS	ADI/亞德諾	21+	原封裝	13880	公司只售原裝,支持實(shí)單	詢價(jià)
博速半導(dǎo)體（深圳）有限公司	IC-OP177GS	ADI/亞德諾	22+		66900	原封裝	詢價(jià)

更多ICO-640-ZAGG供應(yīng)商更新時(shí)間2024-11-19 16:05:00

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