首頁 >HVU131(TRF-E)>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Industrial4-portPCIeunmanagedGigabitEthernetswitchcard | ORING ORing Industrial Networking Corp | ORING | ||
Industrial4-portPCIeunmanagedGigabitPoEEthernetswitchcard | ORING ORing Industrial Networking Corp | ORING | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | TI1Texas Instruments 德州儀器 | TI1 | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | TI1Texas Instruments 德州儀器 | TI1 | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | TI1Texas Instruments 德州儀器 | TI1 | ||
N-CHANNELPOWERMOSFETS FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
N-ChannelPowerMOSFETs,20A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω | GESS GE Solid State | GESS | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
詳細參數(shù)
- 型號:
HVU131(TRF-E)
- 制造商:
Renesas Electronics
- 功能描述:
Cut Tape
- 制造商:
Renesas
- 功能描述:
Diode PIN Switch 65V 2-Pin URP T/R
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS瑞薩/HITACHI日立 |
24+ |
SOD-3230805 |
9200 |
新進庫存/原裝 |
詢價 | ||
HIT |
24+ |
原廠封裝 |
9000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
SOD-323 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
RENESA |
2020+ |
SOD-323 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
原裝HITACHI |
2023+ |
SOD-323 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
HITACHI |
24+ |
SOD-323 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
RENESAS/瑞薩 |
24+ |
SOD323 |
3000 |
原裝現(xiàn)貨 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
SOD323 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
HITACHI |
21+ |
SOD-323 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
HITACHI |
24+ |
SOD323-2 |
2600 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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